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10-FZ06NIA030SA-P924F33 preliminary datasheet flownpc0 600v/30a ? neutral-point-clamped inverter ? clip-in pcb mounting ? low inductance layout ? ups and solar ? 10-FZ06NIA030SA-P924F33 tj=25c, unless otherwise specified parameter symbol value unit buck igbt t =80 c 30 v flow0 housing target applications schematic types features maximum ratings condition collector-emitter break down voltage 600 v ces t h =80 c 30 t c =80c 40 t h =80c 56 t c =80c 85 t sc t j ? 150c 6 s v cc v ge =15v 360 v t j ? 150c v ce <=v ces buck fwd t h =80c 27 t c =80c 36 t h =80c 44 t c =80c 67 a dc forward current a t j =t j max peak repetitive reverse voltage turn off safe operating area i f t c =100c 90 i frm v rrm 60 v ge t j max p tot short circuit ratings gate-emitter peak voltage maximum junction temperature power dissipation per igbt c v a w a dc collector current t j max repetitive peak forward current power dissipation per diode p tot v w a i cpulse i c t j =t j max 90 pulsed collector current 175 maximum junction temperature c t j =t j max t p limited by t j max 175 600 20 t p limited by t j max t j =t j max t j =25c copyright e\ vincotech 1 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition boost igbt t h =80c 30 t c =80c 39 t h =80c 56 t c =80c 85 t sc t j ? 150c 6 s v cc v ge =15v 360 v t j ? 150c v ce <=v ces buck and boost inverse fwd t h =80c 26 t c =80c 36 t h =80c 44 t c =80c 67 turn off safe operating area 60 a 600 90 v ge i f t j =t j max t j max p tot w v peak repetitive reverse voltage repetitive peak forward current i frm a a t j =t j max t p limited by t j max 600 90 short circuit ratings dc collector current power dissipation per igbt collector-emitter break down voltage a t p limited by t j max pulsed collector current gate-emitter peak voltage v ces i cpuls t j =t j max i c 20 dc forward current p tot power dissipation per diode t j =t j max maximum junction temperature v a v c w 175 t c =25c v rrm thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+(tjmax - 25) c storage temperature t stg -40?+125 c 175 c maximum junction temperature t j max copyright e\ vincotech 2 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 5 5,8 6,5 t j =125c t j =25c 1 1,54 1,95 t j =125c 1,73 t j =25c 30 t j =125c t j =25c 350 t j =125c t j =25c 98 t j =125c 101 t j =25c 11 t j =125c 16 t j =25c 155 t j =125c 174 t j =25c 93 t j =125c 107 t j =25c 0,47 t j =125c 0,62 t j =25c 0,80 t j =125c 1,02 thermal resistance chip to heatsink per chip r thjh thermal grease thickness ? 50um = 1 w/mk 1,69 k/w t j =25c 1 1,75 2,05 t j =125c 1,73 167 na none ns 108 v mws a pf nc v 1630 30 0,00043 output capacitance 25 input capacitance 0 20 fall time turn-off delay time turn-on delay time 600 0 integrated gate resistor buck igbt gate emitter threshold voltage 15 gat e-emitter leakage current turn-on energy loss per pulse reverse transfer capacitance diode forward voltage gate charge turn-off energy loss per pulse 50 value characteristic values conditions v ge(th) v ce(sat) i ces r gint t r collector-emitter saturation voltage collector-emitter cut-off current incl. diode rise time v f buck fwd q gate rgoff=16 t d(off) c oss f=1mhz rgon=16 i ges t f e on e off t d(on) c rss v ce =v ge 15 15 0 c ies 30 tj=25c v tj=25c 30 30 350 480 t j =25c 36 t j =125c 39 t j =25c 127 t j =125c 183 t j =25c 1,41 t j =125c 2,29 di ( rec ) max t j =25c 4073 /d t t j =125c 2293 t j =25c 0,33 t j =125c 0,55 thermal resistance chip to heatsink per chip r thjh thermal grease thickness ? 50um = 1 w/mk 2,15 k/w ns a c mws a/ s reverse recovery time rgon=16 reverse recovered charge peak reverse recovery current peak rate of fall of recovery current erec reverse recovered energy i rrm q rr t rr 15 350 30 copyright e\ vincotech 3 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value characteristic values conditions t j =25c 5 5,8 6,5 t j =125c t j =25c 1 1,54 1,95 t j =125c 1,73 t j =25c 30 t j =125c t j =25c 350 t j =125c t j =25c 102 t j =125c 102 t j =25c 15 t j =125c 18 t j =25c 158 t j =125c 177 t j =25c 88 t j =125c 105 t j =25c 0,45 t j =125c 0,59 t j =25c 0,81 t j =125c 1,04 thermal resistance chip to heatsink per chip r thjh thermal grease thickness ? 50um = 1 w/mk 1,69 k/w t j =25c 1 1,75 2,05 none 108 1630 167 600 350 25 30 30 0,00043 30 rgoff=16 20 v 15 15 0 a na v v ce =v ge t d(off) t r i ges f=1mhz rgon=16 tj=25c mws 0 nc 30 ns 480 rise time integrated gate resistor diode forward voltage buck and boost inverse fwd 15 e on 0 v f c oss c ies reverse transfer capacitance collector-emitter saturation voltage i ces t f fall time turn-off delay time collector-emitter cut-off incl diode turn-on delay time gate charge t d(on) r gint v ge(th) c rss boost igbt gate-emitter leakage current turn-off energy loss per pulse q gate e off turn-on energy loss per pulse gate emitter threshold voltage input capacitance output capacitance v ce(sat) 50 tj=25c pf v tj=125c 1,73 thermal resistance chip to heatsink per chip r thjh thermal grease thickness ? 50um = 1 w/mk 2,15 k/w vincotech ntc reference b t=25c k 3950 k 3996 t=25c b-value b (25/100) tol. 3% t=25c b-value b (25/50) tol. 3% t=25c t=25c t=100c t=25c 30 thermistor ? r/r r100=1486 r rated resistance power dissipation constant deviation of r100 power dissipation p mw 200 mw/k diode forward voltage v f 2 5 -5 22000 % v copyright e\ vincotech 4 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 1 igbt figure 2 igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt figure 4 fwd typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage buck typical output characteristics 0 15 30 45 60 75 90 012345 i c (a) v ce (v) 0 15 30 45 60 75 90 012345 i c (a) v ce (v) i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v 0 5 10 15 2 0 25 30 0246810 i c (a) v ge (v) t j = 25 ? c t j = t jm ax -25 ? c 0 15 30 45 60 75 90 0 0,5 1 1,5 2 2,5 3 i f (a) v f (v) t j = 25 ? c t j = t jmax -25 ? c copyright e\ vincotech 5 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 5 igbt figure 6 igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 i c = 31 a r goff = 16 figure 7 fwd figure 8 fwd typical reverse recovery energy loss typical reverse recovery energy loss buck e on high t e off high t e on low t e off low t 0,0 0,4 0,8 1,2 1,6 2,0 0 102030405060 e (mws) i c (a) e off high t e on high t e on low t e off low t 0,0 0,4 0,8 1,2 1,6 2,0 01632486480 e (mws) r g (w) as a function of collector current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 i c = 31 a e rec high t e rec low t 0,0 0,2 0,3 0,5 0,6 0,8 0,9 0 102030405060 e (mws) i c (a) e rec high t e rec low t 0,0 0,2 0,3 0,5 0,6 0,8 0,9 0 1632486480 e (mws) r g (w) copyright e\ vincotech 6 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 9 igbt figure 10 igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 i c = 31 a r goff = 16 figure 11 fwd figure 12 fwd typical reverse recovery time as a typical reverse recovery time as a buck t doff t f t don t r 0,00 0,01 0,10 1,00 0 102030405060 t (ms) i c (a) t doff t f t don t r 0,00 0,01 0,10 1,00 0 1632486480 t (ms) r g (w) function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 31 a r gon = 16 v ge = 15 v t rr high t t rr low t 0,00 0,08 0,16 0,24 0,32 0,40 0 1632486480 t rr (ms) r gon (w) t rr high t t rr low t 0,00 0,05 0,10 0,15 0,20 0,25 0,30 0 102030405060 t rr (ms) i c (a) copyright e\ vincotech 7 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 31 a r gon = 16 v ge = 15 v figure 15 fwd figure 16 fwd typical reverse recovery current as a typical reverse recovery current as a buck q rr high t q rr low t 0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 1632486480 q rr (mc) r gon ( ) q rr high t q rr low t 0,0 0,8 1,6 2,4 3,2 4,0 0 102030405060 q rr (mc) i c (a) function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 31 a r gon = 16 v ge = 15 v ia i rrm high t i rrm low t 0 15 30 45 60 75 90 0 1632486480 i rrm (a) r gon (w) i rrm high t i rrm low t 0 10 20 30 40 50 0 102030405060 i rrm (a) i c (a) copyright e\ vincotech 8 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 31 a r gon = 16 v ge = 15 v figure 19 igbt figure 20 fwd igbt transient thermal impedance f wd transient thermal impedance buck di 0 /dt high t di rec /dt h igh t di 0 /dt low t di rec /dt low t 0 3000 6000 9000 12000 15000 18000 0 1632486480 di rec / dt (a/ms) r gon (w) di 0 /dt hig h t di rec /dt high t di rec /dt low t di o /dt low t 0 1000 2000 3000 4000 5000 6000 0 102030405060 di rec / dt (a/ms) i c (a) as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 1,69 k/w r thjh = 2,15 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,05 7,4e+00 0,05 6,8e+00 0,23 1,0e+00 0,23 1,0e+00 0,62 1,4e-01 0,72 1,3e-01 0,50 2,6e-02 0,63 3,2e-02 0,18 4,3e-03 0,32 5,4e-03 0,11 3,2e-04 0,19 4,3e-04 z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 copyright e\ vincotech 9 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 c t j = 175 c v ge = 15 v figure 23 fwd figure 24 fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) buck 0 20 40 60 80 100 120 0 50 100 150 200 p tot (w) t h ( o c) 0 10 20 30 40 50 0 50 100 150 200 i c (a) t h ( o c) 100 50 at at t j = 175 c t j = 175 c 0 20 40 60 80 0 50 100 150 200 p tot (w) t h ( o c) 0 10 20 30 40 0 50 100 150 200 i f (a) t h ( o c) copyright e\ vincotech 10 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 25 igbt figure 26 igbt turn on safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(q g ) at at t j =t jmax oc i c = 31 a buck & boost i c (a) v ce (v) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 10 0 10 3 0 5 10 15 0 50 100 150 200 v ge (v) q g (nc) 120 v 480 v copyright e\ vincotech 11 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 1 igbt figure 2 igbt typical output characteristics typ ical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt typical transfer characteristics i c = f(v ge ) boost 0 15 30 45 60 75 90 012345 i c (a) v ce (v) 30 0 15 30 45 60 75 90 012345 i c (a) v ce (v) at t p = 250 s v ce = 10 v 0 5 10 15 20 25 0246810 i c (a) v ge (v) t j = 25 ? c t j = t jmax -25 ? c copyright e\ vincotech 12 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 4 igbt figure 5 igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 i c = 29 a r goff = 16 figure 6 igbt figure 7 igbt typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor boost e off high t e on high t e on low t e off low t 0 0,4 0,8 1,2 1,6 2 0 102030405060 e (mws) i c (a) e off high t e on high t e on low t e off low t 0 0,4 0,8 1,2 1,6 2 0 1632486480 e (mws) r g ( ) e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 i c = 29 a e rec high t e rec low t 0 0,2 0 ,4 0,6 0,8 1 0 102030405060 e (mws) i c (a) e rec high t e rec low t 0 0,2 0 ,4 0,6 0,8 1 01632486480 e (mws) r g ( ) copyright e\ vincotech 13 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 8 igbt figure 9 igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 i c = 29 a r goff = 16 figure 10 fwd figure 11 fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor boost t doff t f t don t r 0,001 0,01 0,1 1 0 102030405060 t ( s) i c (a) t dof f t f t don t r 0,001 0,01 0,1 1 01632486480 t ( s) r g ( ) t rr = f(ic) t rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 29 a r gon = 16 v ge = 15 v t rr low t 0,00 0,08 0,16 0,24 0,32 0,40 01632486480 t rr (ms) r gon (w) t rr high t t rr high t t rr low t 0,00 0,0 5 0,10 0,15 0,20 0,25 0,30 0 102030405060 t rr (ms) i c (a) copyright e\ vincotech 14 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 12 fwd figure 13 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 29 a r gon = 16 v ge = 15 v figure 14 fwd figure 15 fwd typical reverse recovery current as a typical reverse recovery current as a boost q rr high t q rr low t 0,0 0,8 1,6 2,4 3,2 4,0 0 1632486480 q rr (mc) r gon ( ) q rr high t q rr low t 0,0 0,8 1,6 2,4 3,2 4,0 0102030405060 q rr (mc) i c (a) function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 29 a r gon = 16 v ge = 15 v i rrm high t i rrm low t 0 10 20 30 40 50 60 0 1632486480 i rrm (a) r gon (w) i rrm high t i rrm low t 0 8 16 24 32 40 0 102030405060 i rrm (a) i c (a) copyright e\ vincotech 15 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 16 fwd figure 17 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 29 a r gon = 16 v ge = 15 v figure 18 igbt boost di 0 /dt high t di rec /dt high t di 0 /dt lo w t di rec /dt low t 0 1500 3000 4500 6000 7500 01632486480 di rec / dt (a/ms) r gon (w) di 0 /dt hi gh t di rec /dt high t di rec /dt low t di o /dt low t 0 800 1600 2400 3200 4000 0 102030405060 di rec / dt (a/ms) i c (a) igbt transient thermal impedance as a function of pulse width z thjh = f(t p ) at d = tp / t r thjh = 1,69 k/w r (c/w) tau (s) 0,05 7,4e+00 0,23 1,0e+00 0,62 1,4e-01 0,50 2,6e-02 0,18 4,3e-03 0,11 3,2e-04 z thjh (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 copyright e\ vincotech 16 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 19 igbt figure 20 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 oc t j = 175 oc v ge = 15 v boost 0 20 40 60 80 100 120 0 50 100 150 200 p tot (w) t h ( o c) 0 10 20 30 40 50 0 50 100 150 200 i c (a) t h ( o c) copyright e\ vincotech 17 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 1 buck and boost inverse diode figure 2 buck and boost inverse diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) at at t p = 350 s d = tp / t r thjh = 2,15 k/w figure 3 buck and boost inverse diode figure 4 buck and boost inverse diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) buck and boost inverse diode 0 15 30 45 60 75 90 0 0,5 1 1,5 2 2,5 3 i f (a) v f (v) t j = 25 ? c t j = t jmax -25 ? c z thjc (k/w) t p (s) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 50 at at t j = 175 oc t j = 175 oc 0 20 40 60 80 0 50 100 150 200 p tot (w) th ( o c) 0 10 20 30 40 0 50 100 150 200 i f (a) th ( o c) copyright e\ vincotech 18 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 1 thermistor figure 2 thermistor typical ntc characteristic typical ntc resistance values as a function of temperature r t = f(t) thermistor 0 5000 10000 15000 20000 25000 25 50 75 100 125 r/ t (c) ntc-typical temperature characteristic [] ? = ? ? 1 ? ? ? 1 ? ? ? 25 100 / 25 1 1 25 ) ( t t b e r t r copyright e\ vincotech 19 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet t j 125 c r gon 16 r goff 16 figure 1 output inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )(t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 31 a i c (100%) = 31 a t doff = 0,17 s t don = 0,10 s t eoff = 0,41 s t eon = 0,21 s figure 3 output inverter igbt figure 4 output inverter igbt switching definitions buck igbt general conditions = = = i c 1% v ce 90% v ge 90% -20 0 20 40 60 80 100 120 140 -0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 % time (us) t do f f t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 1 00 150 200 250 2,8 2,9 3 3,1 3,2 3,3 3,4 3,5 % time(us) i c v ce t eon v ge turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 31 a i c (100%) = 31 a t f = 0,11 s t r = 0,02 s fitted i c 10% i c 90% i c 60 % i c 40 % -20 0 20 40 60 80 100 120 140 0 0,05 0,1 0,15 0,2 0,25 0,3 % time (us) v ce i c t f i c 10 % i c 90% -40 0 40 80 120 160 200 240 3 3,05 3,1 3,15 3,2 3,25 % time(us) t r v ce i c copyright e\ vincotech 20 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 10,70 kw p on (100%) = 10,70 kw e off (100%) = 1,02 mj e on (100%) = 0,62 mj t eoff = 0,41 s t eon = 0,21 s figure 7 output inverter fwd figure 8 output inverter igbt gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t r r switching definitions buck igbt i c1% v ge90% -20 0 20 40 60 80 100 120 -0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 % time (us) p of f e off t eoff v ce3% v ge 10% -20 0 20 40 60 80 100 120 140 160 2,9 3 3,1 3,2 3,3 3,4 % time(us) p on e on t eon 20 g e (v) 120 % i d v geoff = -15 v v d (100%) = 350 v v geon = 15 v i d (100%) = 31 a v c (100%) = 350 v i rrm (100%) = -39 a i c (100%) = 31 a t rr = 0,18 s q g = 261,94 nc -20 -15 - 10 -5 0 5 10 15 -50 0 50 100 150 200 250 300 v g q g (nc) i rrm 10% i rrm 90% i rrm 100% t rr -160 -120 -80 -40 0 40 80 3 3,1 3,2 3,3 3,4 3,5 3,6 time(us) v d fitted copyright e\ vincotech 21 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet figure 9 output inverter fwd figure 10 output inverter fwd turn-on switching waveforms & definition of t qr r turn-on switching waveforms & definition of t erec (t qrr = integrating time for q r r )(t erec = integrating time for e rec ) i d (100%) = 31 a p rec (100%) = 10,70 kw q rr (100%) = 2,29 c e rec (100%) = 0,55 mj t qrr = 0,67 s t erec = 0,67 s figure 11 figure 12 buck stage switching measurement circuit boost stage switching measurement circuit measurement circuits switching definitions buck igbt t qrr -150 -100 -50 0 50 100 150 2,95 3,15 3,35 3,55 3,75 3,95 % time(us) i d q r r -25 0 25 50 75 100 125 2,95 3,15 3,35 3,55 3,75 3,95 % time(us) p rec e rec t erec copyright e\ vincotech 22 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet version ordering code in datamatrix as in packaging barcode as standard in flow0 12mm housing 10-FZ06NIA030SA-P924F33 p924f33 p924f33 outline ordering code & marking ordering code and marking - outline - pinout pinout copyright e\ vincotech 23 revision: 1
10-FZ06NIA030SA-P924F33 preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) sup port or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. copyright e\ vincotech 24 revision: 1

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